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| VHB50-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45 A O.125 NOM. FULL R J .125 FEATURES: * * * OmnigoldTM Metalization System C D F E HI MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC O O G 6.5 A 65 V 35 V 4.0 V 75W -65 C to +200 C -65 C to +150 C 2.3 OC/W O O DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10728 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO ICES hFE Cob fT PG C TC = 25 C O NONETEST CONDITIONS IC = 200 mA IC = 200 mA IE = 10 mA VCB = 30 V VCE = 30 V VCE = 5.0 V VCB = 28 V VCE = 10 V VCE = 28 V IC = 500 mA POUT =50 W IC = 500 mA f = 1.0 MHz f = 100 MHz f = 175 MHz TC = 125 C O MINIMUM TYPICAL MAXIMUM 35 65 4.0 2.0 10 5.0 --80 200 6.0 60 UNITS V V V mA mA --pF MHz dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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